DocumentCode :
1525150
Title :
A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications
Author :
Tsai, King-Chun ; Gray, Paul R.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume :
34
Issue :
7
fYear :
1999
fDate :
7/1/1999 12:00:00 AM
Firstpage :
962
Lastpage :
970
Abstract :
This paper presents a 1-W, class-E power amplifier that is implemented in a 0.35-μm CMOS technology and suitable for operations up to 2 GHz. The concept of mode locking is used in the design, in which the amplifier acts as an oscillator whose output is forced to run at the input frequency. A compact off-chip microstrip balun is also proposed for output differential-to-single-ended conversion. At 2-V supply and at 1.98 GHz, the power amplifier achieves 48% power-added efficiency (41% combined with the balun)
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; baluns; mobile radio; 0.35 micron; 1 W; 1.9 to 2 GHz; 2 V; 41 percent; 48 percent; CMOS class-E power amplifier; UHF; compact offchip microstrip balun; mode locking; output differential-to-single-ended conversion; wireless communications; CMOS technology; Frequency; Impedance matching; Microstrip; Operational amplifiers; Power amplifiers; Power generation; Radiofrequency amplifiers; Switches; Wireless communication;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.772411
Filename :
772411
Link To Document :
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