Title :
Minimisation of base transit time in AlGaAs/GaAs heterostructure bipolar transistor (HBT)
Author :
Zebda, Y. ; Elnagar, A. ; Hussein, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Sultan Qaboos Univ., Muscat, Oman
fDate :
12/1/1997 12:00:00 AM
Abstract :
A new trial function for the base doping profile in an AlGaAs/GaAs heterojunction bipolar transistor (HBT) is proposed. It is found that for certain doping parameters this base doping profile will minimise the base transit time. Furthermore, this function is neither exponential nor Gaussian as claimed by previous studies. In the paper the base width and the peak base doping are held constant
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; heterojunction bipolar transistors; AlGaAs-GaAs; AlGaAs/GaAs HBT; base doping profile; base transit time minimisation; doping parameters; heterostructure bipolar transistor; trial function;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19971488
