DocumentCode :
1525392
Title :
Position Modulation Code for Rewriting Write-Once Memories
Author :
Wu, Yunnan ; Jiang, Anxiao Andrew
Author_Institution :
Facebook, Inc., Palo Alto, CA, USA
Volume :
57
Issue :
6
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
3692
Lastpage :
3697
Abstract :
A write-once memory (wom) is a storage medium formed by a number of “write-once” bit positions (wits), where each wit initially is in a “0” state and can be changed to a “1” state irreversibly. Examples of write-once memories include SLC flash memories and optical disks. This paper presents a low complexity coding scheme for rewriting such write-once memories, which is applicable to general problem configurations. The proposed scheme is called the position modulation code, as it uses the positions of the zero symbols to encode some information. The proposed technique can achieve code rates higher than state-of-the-art practical solutions for some configurations. For instance, there is a position modulation code that can write 56 bits 10 times on 278 wits, achieving rate 2.01. In addition, the position modulation code is shown to achieve a rate at least half of the optimal rate.
Keywords :
flash memories; modulation coding; optical disc storage; SLC flash memories; low complexity coding scheme; optical disks; position modulation code; write-once memories; Ash; Complexity theory; Decoding; Encoding; Indexes; Modulation; Polynomials; Flash memories; position modulation; write-once memories;
fLanguage :
English
Journal_Title :
Information Theory, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9448
Type :
jour
DOI :
10.1109/TIT.2011.2134370
Filename :
5773064
Link To Document :
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