• DocumentCode
    1525392
  • Title

    Position Modulation Code for Rewriting Write-Once Memories

  • Author

    Wu, Yunnan ; Jiang, Anxiao Andrew

  • Author_Institution
    Facebook, Inc., Palo Alto, CA, USA
  • Volume
    57
  • Issue
    6
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    3692
  • Lastpage
    3697
  • Abstract
    A write-once memory (wom) is a storage medium formed by a number of “write-once” bit positions (wits), where each wit initially is in a “0” state and can be changed to a “1” state irreversibly. Examples of write-once memories include SLC flash memories and optical disks. This paper presents a low complexity coding scheme for rewriting such write-once memories, which is applicable to general problem configurations. The proposed scheme is called the position modulation code, as it uses the positions of the zero symbols to encode some information. The proposed technique can achieve code rates higher than state-of-the-art practical solutions for some configurations. For instance, there is a position modulation code that can write 56 bits 10 times on 278 wits, achieving rate 2.01. In addition, the position modulation code is shown to achieve a rate at least half of the optimal rate.
  • Keywords
    flash memories; modulation coding; optical disc storage; SLC flash memories; low complexity coding scheme; optical disks; position modulation code; write-once memories; Ash; Complexity theory; Decoding; Encoding; Indexes; Modulation; Polynomials; Flash memories; position modulation; write-once memories;
  • fLanguage
    English
  • Journal_Title
    Information Theory, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9448
  • Type

    jour

  • DOI
    10.1109/TIT.2011.2134370
  • Filename
    5773064