Title :
High-Speed Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers
Author_Institution :
Walter Schottky Inst., Tech. Univ. of Munich, Garching, Germany
Abstract :
InP-based, vertical-cavity surface-emitting lasers (VCSELs) utilizing a buried tunnel junction (BTJ) emitting at 1.55 μm with improved active region and reduced parasitics are demonstrated. A superior modulation bandwidth > 10 GHz is achieved up to 85 °C. The VCSEL device is investigated in detail, analyzing all bandwidth-limiting elements. With their improved temperature range, these VCSELs are especially qualified for uncooled operation in passive optical networks. These lasers show open eyes and error-free transmission up to 25-Gb/s modulation speed at room temperature. Uncooled error-free operation over a wide temperature range under constant bias conditions for ultra-low-cost systems is demonstrated at a 12.5-Gb/s data rate up to 85 °C. Due to a well-tailored mode-gain detuning, the laser characteristics are practically invariant with temperature at fixed bias conditions. Further possible design optimizations targeting at data rates well above 25 Gb/s are discussed.
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; laser beams; laser tuning; optical modulation; surface emitting lasers; InP; VCSEL device; bandwidth-limiting elements; bit rate 12.5 Gbit/s; high-speed buried tunnel junction; mode-gain detuning; modulation bandwidth; passive optical networks; temperature 293 K to 298 K; ultralow-cost systems; uncooled error-free operation; vertical-cavity surface-emitting lasers; wavelength 1.55 mum; Laser modes; Laser theory; Optical surface waves; Permission; Photonics; Physics; Solid state circuits; Surface emitting lasers; Temperature distribution; Vertical cavity surface emitting lasers; Vertical-cavity surface-emitting laser (VCSEL); high-speed modulation;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2010.2055554
