On surface roughness-limited mobility in highly doped n-MOSFET´s

Author

Mazzoni, Gianluca ; Lacaita, Andrea L. ; Perron, Laura M. ; Pirovano, Agostino

Author_Institution

Dipt. di Elettronica e Inf., Politecnico di Milano, Italy

Volume

46

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

1423

Lastpage

1428

Abstract

Based on a numerical study of Ando´s model for surface roughness scattering, we assess the links between the functional dependencies of the electron surface roughness-limited mobility and the morphology of the interface. The results are summarized in an analytical expression that can be implemented into device simulators. Our results also highlight that as the channel doping increases, the surface roughness-limited mobility features a roll-off in the low effective field region, similar to the one due to the Coulomb-limited mobility. This physical effect is discussed

Keywords

MOSFET; electron mobility; heavily doped semiconductors; rough surfaces; semiconductor device models; surface scattering; Ando model; device simulation; electron mobility; highly doped n-MOSFET; interface morphology; surface roughness scattering; Analytical models; Degradation; Electron mobility; MOSFET circuits; Rough surfaces; Scattering; Semiconductor process modeling; Surface morphology; Surface roughness; Temperature dependence;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.772486

Filename

772486