DocumentCode :
1525491
Title :
\\hbox {Zr}_{x}\\hbox {Ti}_{1 - x}\\hbox {O}_{2} -Based Ultraviolet Detectors Series
Author :
Zhang, Haifeng ; Feng, Caihui ; Liu, Caixia ; Xie, Tianjiao ; Zhou, Jingran ; Ruan, Shengping
Author_Institution :
State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
Volume :
32
Issue :
7
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
934
Lastpage :
936
Abstract :
In this letter, ZrxTi1-xO2-based ultraviolet (UV) detector series with Pt electrodes were fabricated. The ZrxTi1-xO2thin films were prepared by a sol-gel method and characterized by means of X-ray diffraction and UV-visible absorption spectra. At 5 V bias, the dark currents of the detectors were less than 7 nA; under radiation of UV light, a high responsivity rate of 470 A/W was achieved at 270 nm for the Zr0.1Ti0.9O2 detector. The results showed that, at low Zr doping, the photoresponse was greatly improved, whereas at high Zr doping, the response peaks shift to the short-wavelength direction, which provides a new platform to fabricate solar-blind UV detectors.
Keywords :
X-ray diffraction; platinum; semiconductor thin films; sol-gel processing; ultraviolet detectors; ultraviolet spectra; visible spectra; wide band gap semiconductors; zirconium compounds; Pt electrodes; UV-visible absorption spectra; X-ray diffraction; ZrxTi1-xO2; dark currents; fabrication; photoresponse; sol-gel method; thin films; ultraviolet detector series; Absorption; Dark current; Detectors; Doping; Electrodes; Materials; Zirconium; $hbox{Zr}_{x}hbox{Ti}_{1 - x}hbox{O}_{2}$; Sol–gel; ultraviolet (UV) detector;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2148690
Filename :
5773077
Link To Document :
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