Title :
Low frequency noise measurements of p-channel Si1-xGe x MOSFET´s
Author :
Lambert, A.D. ; Alderman, B. ; Lander, R.J.P. ; Parker, E.H.C. ; Whall, T.E.
Author_Institution :
Dept. of Phys., Warwick Univ., Coventry, UK
fDate :
7/1/1999 12:00:00 AM
Abstract :
In this brief, we report an investigation of the low frequency noise in p-channel SiGe MOSFET´s. At low gate bias the noise spectrum consists of several trap related generation-recombination (g-r) noise components. At higher gate bias, the noise spectrum is dominated by 1/f noise. The 1/f noise is attributed to a fluctuation in the number of free carriers and the effective slow state trap density at the Fermi energy calculated
Keywords :
1/f noise; Ge-Si alloys; MOSFET; semiconductor device noise; semiconductor materials; 1/f noise; Fermi energy; SiGe; free carrier number fluctuation; generation-recombination noise; low frequency noise; p-channel Si1-xGex MOSFET; slow state trap density; Fluctuations; Frequency measurement; Germanium silicon alloys; Low-frequency noise; MOSFET circuits; Noise generators; Noise measurement; Performance evaluation; Plasma temperature; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
