Title :
Tunneling bursts for negligible SILC degradation
Author :
Riccò, Bruno ; Pieracci, A.
Author_Institution :
Dept. of Electron., Bologna Univ., Italy
fDate :
7/1/1999 12:00:00 AM
Abstract :
This paper suggests the use of high-voltage tunneling bursts for (virtually) SILC-free current injection in ultra-thin MOS structures and indicates the possibility of fast programming of tunnel-based nonvolatile memories
Keywords :
EPROM; MOS memory circuits; integrated circuit reliability; leakage currents; tunnelling; SILC degradation; SILC-free current injection; fast programming; high-voltage tunneling bursts; stress-induced leakage current; tunnel-based nonvolatile memories; ultra-thin MOS structures; Current density; Degradation; Nonvolatile memory; Optical reflection; Photovoltaic cells; Silicon; Stress; Surface resistance; Surface texture; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
