Recombination current modeling and carrier lifetime extraction in dual-gate fully-depleted SOI devices

Author

Ernst, Thomas ; Cristoloveanu, Sorin ; Vandooren, Anne ; Rudenko, Tamara ; Colinge, Jean-Pierre

Author_Institution

Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France

Volume

46

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

1503

Lastpage

1509

Abstract

The typical behavior of the recombination current in fully-depleted silicon-on-insulator (SOI) PIN diodes including gate-all-around and double-gate configurations is investigated. An excess forward current is measured when carrier recombination occurs in the whole body of the device. A novel “recombination-box” model is proposed, validated by two-dimensional (2-D) simulation, and used to extract the carrier recombination rate. The physical origin of carrier recombination in fully-depleted structures is discussed in terms of volume and/or surface contributions

Keywords

MOSFET; carrier lifetime; electron-hole recombination; leakage currents; p-i-n diodes; semiconductor device models; silicon-on-insulator; 2D simulation; PIN diodes; carrier lifetime extraction; carrier recombination rate; double-gate configurations; dual-gate fully-depleted SOI devices; excess forward current; gate-all-around configurations; recombination current modeling; recombination-box model; surface contributions; Bipolar transistors; Charge carrier lifetime; Current measurement; Leakage current; Pulse measurements; Radiative recombination; Semiconductor diodes; Silicon on insulator technology; Spontaneous emission; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.772502

Filename

772502