Collector-up SiGe heterojunction bipolar transistors

Author

Gruhle, Andreas ; Kibbel, Horst ; Mähner, Claus ; Mroczek, Werner

Author_Institution

Res. Center, Daimler-Benz AG, Ulm, Germany

Volume

46

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

1510

Lastpage

1513

Abstract

SiGe heterojunction bipolar transistors (HBTs) in a collector-up version have been built. This configuration has the advantage of a very low collector-base capacitance. In addition, because the substrate is the emitter, extremely low emitter series inductances may be achieved, e.g., in the case of packaged discrete devices. This is particularly interesting for RF power amplifiers. Transistors fabricated on MBE-grown layers with an emitter size of 1.6 μm showed near-ideal Gummel plots, DC current gains of up to 485, an S₂₁ gain of 20 dB at 2 GHz and an f_max of 33 GHz. A problem to be solved is the large parasitic C_BE capacitance which degrades the transit frequency

Keywords

Ge-Si alloys; UHF bipolar transistors; capacitance; heterojunction bipolar transistors; inductance; microwave bipolar transistors; semiconductor materials; 1.6 micron; 2 GHz; 20 dB; 33 GHz; DC current gain; MBE-grown layers; RF power amplifiers; SiGe; SiGe heterojunction bipolar transistors; collector-up HBT; low collector-base capacitance; low emitter series inductances; near-ideal Gummel plots; packaged discrete devices; parasitic C_BE capacitance; transit frequency degradation; Degradation; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Packaging; Parasitic capacitance; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.772503

Filename

772503