Title :
Channel width dependence of hot-carrier induced degradation in shallow trench isolated PMOSFETs
Author :
Ishimaru, Kazunari ; Chen, Jone F. ; Hu, Chenming
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
fDate :
7/1/1999 12:00:00 AM
Abstract :
Channel width dependence of the hot-carrier induced degradation in pMOSFETs with a shallow trench isolation structure is investigated. Enhanced degradation is observed in a narrow channel width device. The narrow width device shows large electron trapping efficiency of the gate oxide film though the gate current is smaller than the wide width device. The mechanical stress caused by shallow trench isolation may be responsible for this phenomenon
Keywords :
CMOS integrated circuits; MOSFET; hot carriers; integrated circuit reliability; internal stresses; isolation technology; semiconductor device reliability; CMOSFET; channel width dependence; electron trapping efficiency; gate oxide film; hot-carrier induced degradation; mechanical stress; narrow channel width device; p-channel MOSFET; shallow trench isolated PMOSFET; Clocks; Degradation; Electron traps; Hot carriers; Logic devices; MOSFET circuits; Random access memory; Silicon compounds; Stress; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
