Ultralow Emission Threshold Light-Emitting Diode of Nanocrystalline ZnO/p-GaN Heterojunction

Author

Wang, T. ; Wu, Hao ; Wang, Z. ; Chen, C. ; Liu, Chang

Author_Institution

Key Lab. of Artificial Micro- & Nanostruct. of the Minist. of Educ., Wuhan Univ., Wuhan, China

Volume

33

Issue

7

fYear

2012

fDate

7/1/2012 12:00:00 AM

Firstpage

1030

Lastpage

1032

Abstract

Under an ultralow driven current density about 15 mA/cm², a blue electroluminescence could be observed from the nanocrystalline n-ZnO/p-GaN heterojunction light-emitting diode. The photoluminescence spectrum showed a dominant sharp near-band-edge emission, and the deep-level emission of the nanocrystalline ZnO films was not observed. Current-voltage characteristics of the heterojunctions indicated a diode like rectification behavior. With the increase in the injection current, an ultraviolet emission was observed due to the recombination in ZnO.

Keywords

II-VI semiconductors; III-V semiconductors; deep levels; electroluminescence; gallium compounds; light emitting diodes; nanostructured materials; photoluminescence; semiconductor heterojunctions; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZnO-GaN; blue electroluminescence; current-voltage characteristics; deep-level emission; diode like rectification behavior; injection current; nanocrystalline films; nanocrystalline heterojunction light-emitting diode; photoluminescence spectrum; sharp near-band-edge emission; ultralow driven current density; ultralow emission threshold light-emitting diode; ultraviolet emission; Current density; Electroluminescence; Gallium nitride; Heterojunctions; Light emitting diodes; Nanoscale devices; Zinc oxide; Electroluminescence (EL); n-ZnO/p-GaN heterojunctions; nanocrystalline;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2195633

Filename

6205603