Title :
Ultralow Emission Threshold Light-Emitting Diode of Nanocrystalline ZnO/p-GaN Heterojunction
Author :
Wang, T. ; Wu, Hao ; Wang, Z. ; Chen, C. ; Liu, Chang
Author_Institution :
Key Lab. of Artificial Micro- & Nanostruct. of the Minist. of Educ., Wuhan Univ., Wuhan, China
fDate :
7/1/2012 12:00:00 AM
Abstract :
Under an ultralow driven current density about 15 mA/cm2, a blue electroluminescence could be observed from the nanocrystalline n-ZnO/p-GaN heterojunction light-emitting diode. The photoluminescence spectrum showed a dominant sharp near-band-edge emission, and the deep-level emission of the nanocrystalline ZnO films was not observed. Current-voltage characteristics of the heterojunctions indicated a diode like rectification behavior. With the increase in the injection current, an ultraviolet emission was observed due to the recombination in ZnO.
Keywords :
II-VI semiconductors; III-V semiconductors; deep levels; electroluminescence; gallium compounds; light emitting diodes; nanostructured materials; photoluminescence; semiconductor heterojunctions; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZnO-GaN; blue electroluminescence; current-voltage characteristics; deep-level emission; diode like rectification behavior; injection current; nanocrystalline films; nanocrystalline heterojunction light-emitting diode; photoluminescence spectrum; sharp near-band-edge emission; ultralow driven current density; ultralow emission threshold light-emitting diode; ultraviolet emission; Current density; Electroluminescence; Gallium nitride; Heterojunctions; Light emitting diodes; Nanoscale devices; Zinc oxide; Electroluminescence (EL); n-ZnO/p-GaN heterojunctions; nanocrystalline;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2195633
