Title :
Self-aligned CoSi2 for 0.18 μm and below
Author :
Maex, Karen ; Lauwers, Anne ; Besser, Paul ; Kondoh, Eiichi ; De Potter, Muriel ; Steegen, An
Author_Institution :
IMEC, Leuven, Belgium
fDate :
7/1/1999 12:00:00 AM
Abstract :
CoSi2 is being used commonly for the advanced IC technologies. There are several process choices to be made for the formation of a high yielding and reproducible silicide. In this paper the various CoSi2 technologies are discussed. The scalability of the process of record, the Co/Ti(cap) process are presented for 0.18 μm and below
Keywords :
cobalt compounds; integrated circuit manufacture; integrated circuit metallisation; 0.18 micron; Co-Ti; Co/Ti cap process; CoSi2; CoSi2 formation process; CoSi2 technologies; IC technologies; Ti capping layer; high yielding silicide; process scalability; reproducible silicide; self-aligned CoSi2; Chemical technology; Cleaning; Manufacturing processes; Rapid thermal processing; Scalability; Silicidation; Silicides; Thermal resistance; Thermal stresses; Tin;
Journal_Title :
Electron Devices, IEEE Transactions on
