DocumentCode
1526184
Title
Temperature Dependence of Pd Thin-Film Cryoresistors
Author
Satrapinski, Alexandre ; Hahtela, Ossi M. ; Savin, Alexander M. ; Novikov, Sergey ; Lebedeva, Natalia
Author_Institution
MIKES, Espoo, Finland
Volume
60
Issue
7
fYear
2011
fDate
7/1/2011 12:00:00 AM
Firstpage
2469
Lastpage
2474
Abstract
Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53) · 10 8 Ωm range for 15-40 nm films. Temperature co efficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 106/K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2 · 10 5/μA in 0.7 K-1 K temperature range.
Keywords
cryostats; electrical resistivity; metallic thin films; palladium; thin film resistors; Pd; current coefficient; film thickness; resistance 100 kohm to 1.3 Mohm; resistance coefficient; resistivity; resistors; size 15 nm to 40 nm; temperature 300 K to 50 mK; thermal evaporation; thin-film cryoresistors; Current measurement; Electrical resistance measurement; Resistance; Resistors; Temperature dependence; Temperature distribution; Temperature measurement; Cryogenics; low temperature; palladium; resistance measurement; thin-film resistors;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/TIM.2011.2139290
Filename
5773491
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