Title :
Buried ridge stripe 1.5 μm GaInAsP/InP laser-waveguide integration by a simplified process
Author :
Remiens, D. ; Hornung, V. ; Rose, B. ; Robein, D.
Author_Institution :
Lab. de Bagneux, CNET, France
fDate :
2/1/1991 12:00:00 AM
Abstract :
Monolithic integration between an active and a passive waveguide directly butt-jointed in a single step of MOCVD is demonstrated at 1.5 μm. Buried ridge stripe (BRS) structures, consisting of a 250 μm long active region and a 1300 μm long passive waveguide, exhibit 25 mA threshold current, 60% coupling coefficient and an optical output power in excess of 5 mW
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical waveguides; semiconductor junction lasers; 1.5 micron; 1300 micron; 25 mA; 250 micron; 5 mW; 60 percent; GaInAsP-InP; MOCVD; active region; active waveguides; buried ridge stripe lasers; butt-jointed; coupling coefficient; diode lasers; laser-waveguide integration; monolithic integration; optical output power; passive waveguide; threshold current;
Journal_Title :
Optoelectronics, IEE Proceedings J
