DocumentCode
1526232
Title
Interface-engineered Josephson junctions optimized for high JC
Author
Shimakage, Hisashi ; Ono, Ronald H. ; Vale, Leila R. ; Wang, Zhen
Author_Institution
Commun. Res. Lab., Kansai Adv. Res. Centre, Kobe, Japan
Volume
11
Issue
2
fYear
2001
fDate
6/1/2001 12:00:00 AM
Firstpage
4032
Lastpage
4035
Abstract
High-temperature superconducting interface-engineered junctions were fabricated using YBa2Cu3O7-δ on LaAlO3 (LAO) and sapphire substrates. We report on the improvements in the electrical characteristics by junction narrowing. Originally, the 2-μm-wide junctions had high critical current densities of 1.2 × 106 A/cm at 4.0 K and showed wide junction effects. Narrowing the junctions to below a micrometer reduced the wide junction effect over a large range of temperatures and the junctions had characteristic voltages of 5.16 mV at 4.0 K. The magnetic-field modulation of the critical current was also more ideal after narrowing. Furthermore, we show that interface engineered junctions on sapphire substrates have similar characteristics to those on LAO
Keywords
barium compounds; critical current density (superconductivity); high-temperature superconductors; superconducting junction devices; yttrium compounds; 2 micron; 4.0 K; 5.16 mV; LaAlO3; YBa2Cu3O7-δ; YBa2Cu3O7; critical current densities; high-temperature superconductors; interface-engineered Josephson junctions; junction narrowing; magnetic-field modulation; wide junction effects; Annealing; Critical current; Critical current density; High temperature superconductors; Josephson junctions; Optical films; Reproducibility of results; Superconducting microwave devices; Voltage; Yttrium barium copper oxide;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/77.947380
Filename
947380
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