DocumentCode :
1526496
Title :
6W CW front-facet power from short-cavity (0.5 mm), 100 μm stripe Al-free 0.98 μm emitting diode lasers
Author :
Botez, D. ; Mawst, L.J. ; Bhattacharya, Avik ; Lopez, J. ; Li, Jie ; Kuech, T.F. ; Suruceanu, G.I. ; Caliman, A. ; Syrbu, A.V. ; Morris, Jesse
Author_Institution :
Reed Center for Photonics, Wisconsin Univ., Madison, WI
Volume :
33
Issue :
24
fYear :
1997
fDate :
11/20/1997 12:00:00 AM
Firstpage :
2037
Lastpage :
2039
Abstract :
100 μm stripe, 500 μm long InGaAs/InGaP/GaAs facet-coated diode lasers of low series resistance Rs (0.09 Ω) emit up to 6W CW output power from their front facets. Comparison with previously published data indicates that for low Rs (⩽0.10 Ω) devices, the internal power density at catastrophic optical-mirror damage (P¯COMD) is independent of device length, agreeing closely with theory
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; semiconductor lasers; 0.09 ohm; 0.5 mm; 0.98 micron; 100 micron; 6 W; CW front-facet output power; InGaAs-InGaP-GaAs; catastrophic optical-mirror damage; internal power density; series resistance; short-cavity facet-coated stripe diode laser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19971390
Filename :
648455
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1526496
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