• DocumentCode
    1526496
  • Title

    6W CW front-facet power from short-cavity (0.5 mm), 100 μm stripe Al-free 0.98 μm emitting diode lasers

  • Author

    Botez, D. ; Mawst, L.J. ; Bhattacharya, Avik ; Lopez, J. ; Li, Jie ; Kuech, T.F. ; Suruceanu, G.I. ; Caliman, A. ; Syrbu, A.V. ; Morris, Jesse

  • Author_Institution
    Reed Center for Photonics, Wisconsin Univ., Madison, WI
  • Volume
    33
  • Issue
    24
  • fYear
    1997
  • fDate
    11/20/1997 12:00:00 AM
  • Firstpage
    2037
  • Lastpage
    2039
  • Abstract
    100 μm stripe, 500 μm long InGaAs/InGaP/GaAs facet-coated diode lasers of low series resistance Rs (0.09 Ω) emit up to 6W CW output power from their front facets. Comparison with previously published data indicates that for low Rs (⩽0.10 Ω) devices, the internal power density at catastrophic optical-mirror damage (P¯COMD) is independent of device length, agreeing closely with theory
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; semiconductor lasers; 0.09 ohm; 0.5 mm; 0.98 micron; 100 micron; 6 W; CW front-facet output power; InGaAs-InGaP-GaAs; catastrophic optical-mirror damage; internal power density; series resistance; short-cavity facet-coated stripe diode laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971390
  • Filename
    648455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1526496