DocumentCode :
1526515
Title :
Effect of saturation caused by amplified spontaneous emission on semiconductor optical amplifier performance
Author :
Liu, Tiegen ; Obermann, K. ; Petermann, K. ; Girardin, F. ; Guekos, G.
Author_Institution :
Dept. Electr. Eng., Tech. Univ. Berlin
Volume :
33
Issue :
24
fYear :
1997
fDate :
11/20/1997 12:00:00 AM
Firstpage :
2042
Lastpage :
2043
Abstract :
The authors have investigated theoretically the effect of amplified spontaneous emission (ASE) on the spatial distribution of the carrier density. Measures of the semiconductor optical amplifier (SOA) performance, such as gain, saturation power and noise figure are derived. It is shown that the saturation due to the ASE strongly affects the SOA performance for device lengths >500 μm. The results are compared with experimental data and found to be in good agreement
Keywords :
carrier density; optical noise; optical saturation; semiconductor lasers; superradiance; 500 micron; amplified spontaneous emission; carrier density; gain; noise figure; saturation power; semiconductor optical amplifier; spatial distribution;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19971356
Filename :
648458
Link To Document :
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