DocumentCode :
1526534
Title :
Room-temperature pulsed operation of 1.3 μm vertical-cavity lasers including bottom InGaAsP/InP multilayer Bragg mirrors
Author :
Salet, P. ; Gaborit, F. ; Pagnod-Rossiaux, Ph ; Plais, A. ; Derouin, E. ; Pasquier, J. ; Jacquet, J.
Author_Institution :
Alcatel-Alsthom Recherche, Marcoussis, France
Volume :
33
Issue :
24
fYear :
1997
fDate :
11/20/1997 12:00:00 AM
Firstpage :
2048
Lastpage :
2049
Abstract :
The authors have fabricated 1.3 μm vertical-cavity lasers including bottom-epitaxial InGaAsP/InP multilayer Bragg mirrors and top SiO2/Si dielectric mirrors; these components exhibit laser operation at room temperature under pulsed electrical injection
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mirrors; semiconductor lasers; surface emitting lasers; 1.3 micron; InGaAsP-InP; SiO2-Si; SiO2/Si dielectric mirror; VCSEL; epitaxial InGaAs/InP multilayer Bragg mirror; pulsed electrical injection; room-temperature operation; vertical-cavity laser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19971408
Filename :
648462
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1526534
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