• DocumentCode
    1526549
  • Title

    Low 1/f noise SiGe HBTs with application to low phase noise microwave oscillators

  • Author

    Gruhle, A. ; Mahner, C.

  • Author_Institution
    Res. Center, Daimler-Benz AG, Ulm
  • Volume
    33
  • Issue
    24
  • fYear
    1997
  • fDate
    11/20/1997 12:00:00 AM
  • Firstpage
    2050
  • Lastpage
    2052
  • Abstract
    SiGe HBTs featuring a high quality oxide passivation show ideal Gummel plots and low 1/f noise with corner frequencies down to 300 Hz. The measured KB-factor of 2.6×10-10 μm 2 s is the lowest of any previously reported HBT. With an f T of 40 GHz, the devices are ideal for low phase noise microwave oscillators. A simple 10 GHz microstrip resonator showed -100 dBc at 100 kHz off carrier
  • Keywords
    1/f noise; Ge-Si alloys; heterojunction bipolar transistors; microstrip resonators; microwave bipolar transistors; microwave oscillators; passivation; phase noise; semiconductor device noise; semiconductor materials; 1/f noise; 10 GHz; Gummel plot; KB-factor; SiGe; SiGe HBT; corner frequency; cut-off frequency; microstrip resonator; microwave oscillator; oxide passivation; phase noise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971363
  • Filename
    648464
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1526549