DocumentCode :
1526549
Title :
Low 1/f noise SiGe HBTs with application to low phase noise microwave oscillators
Author :
Gruhle, A. ; Mahner, C.
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm
Volume :
33
Issue :
24
fYear :
1997
fDate :
11/20/1997 12:00:00 AM
Firstpage :
2050
Lastpage :
2052
Abstract :
SiGe HBTs featuring a high quality oxide passivation show ideal Gummel plots and low 1/f noise with corner frequencies down to 300 Hz. The measured KB-factor of 2.6×10-10 μm 2 s is the lowest of any previously reported HBT. With an f T of 40 GHz, the devices are ideal for low phase noise microwave oscillators. A simple 10 GHz microstrip resonator showed -100 dBc at 100 kHz off carrier
Keywords :
1/f noise; Ge-Si alloys; heterojunction bipolar transistors; microstrip resonators; microwave bipolar transistors; microwave oscillators; passivation; phase noise; semiconductor device noise; semiconductor materials; 1/f noise; 10 GHz; Gummel plot; KB-factor; SiGe; SiGe HBT; corner frequency; cut-off frequency; microstrip resonator; microwave oscillator; oxide passivation; phase noise;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19971363
Filename :
648464
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1526549
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