Title :
1 - 8-GHz GaN-based power amplifier using flip-chip bonding
Author :
Xu, J.J. ; Yi-Feng Wu ; Keller, S. ; Heikman, S. ; Thibeault, Brian J. ; Mishra, Umesh K. ; York, R.A.
Author_Institution :
Dept. of Electr. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
7/1/1999 12:00:00 AM
Abstract :
We report the first gallium nitride (GaN)-based broad-band power amplifier. The circuit was fabricated on an AlN substrate using AlGaN-GaN power high-electron mobility transistors (HEMTs), grown on sapphire substrates, which were flip-chip bonded for thermal management. The amplifier employed a modified traveling-wave power amplifier (TWPA) topology that eliminated the backward wave of conventional TWPAs. Using four HEMTs each with 0.75-μm gate length and 0.75-mm gate periphery, a small-signal gain of /spl sim/7 dB was obtained with a bandwidth of 1-8 GHz. At mid-band, an output power of 3.6 W was obtained when biased at V/sub ds/=18 V and 4.5 W when biased at V/sub ds/=22 V.
Keywords :
III-V semiconductors; aluminium compounds; flip-chip devices; gallium compounds; hybrid integrated circuits; microwave field effect transistors; microwave integrated circuits; microwave power amplifiers; microwave power transistors; power HEMT; thermal management (packaging); travelling wave amplifiers; wideband amplifiers; 0.75 micron; 1 to 8 GHz; 18 to 22 V; 3.6 to 4.5 W; 7 GHz; 7 dB; Al/sub 2/O/sub 3/; AlGaN-GaN; AlGaN/GaN power HEMT; AlN; AlN substrate; GaN-based power amplifier; broadband power amplifier; flip-chip bonding; high-electron mobility transistors; modified TWA topology; sapphire substrates; thermal management; traveling-wave power amplifier; Aluminum gallium nitride; Bonding; Circuits; Energy management; Gallium nitride; HEMTs; III-V semiconductor materials; MODFETs; Power amplifiers; Thermal management;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
