DocumentCode :
152657
Title :
Excitation of coherent phonons in GaAs by broadband THz pulses
Author :
Zhengping Fu ; Yamaguchi, Masaki
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
fYear :
2014
fDate :
14-19 Sept. 2014
Firstpage :
1
Lastpage :
1
Abstract :
In this paper, we present coherent excitation of optical phonons with broadband THz pulses from laser induced plasma. GaAs wafer was excited with a single and double THz pulses, and detected with optical probe. In addition to infrared active TO phonons, we have observed oscillation at the frequency of LO phonons, we identified as upper branch of phononpolaritons.
Keywords :
III-V semiconductors; gallium arsenide; optical pulse generation; phonons; polaritons; GaAs; LO phonons; broadband THz pulses; coherent excitation; coherent phonons; infrared active TO phonons; laser induced plasma; optical phonons; optical probe; phonon-polaritons; Broadband communication; Gallium arsenide; Optical pulses; Optical pumping; Optical reflection; Phonons; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
Type :
conf
DOI :
10.1109/IRMMW-THz.2014.6956037
Filename :
6956037
Link To Document :
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