High-gain 150-215-GHz MMIC amplifier with integral waveguide transitions

Author

Weinreb, S. ; Gaier, Todd ; Barsky, M. ; Leong, Yoke Choy ; Samoska, Lorene

Author_Institution

Dept. of Phys. & Astron., Massachusetts Univ., Amherst, MA

Volume

9

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

282

Lastpage

284

Abstract

The design and measured results of a six-stage InP monolithic microwave integrated circuit (MMIC) amplifier with 20±6 dB gain from 150 to 215 GHz is reported. The MMIC has integral probes for direct coupling to 140-220 GHz WR5 waveguide without bond wires or external transitions. This is the first amplifier operating above 140 GHz with sufficient gain to be useful as a single-chip amplifier and demonstrates the practicality of MMIC-based systems in this frequency range for use in radiometry, compact radars, and communication systems

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MIMIC; indium compounds; integrated circuit design; millimetre wave amplifiers; waveguide transitions; 14 to 26 dB; 140 to 220 GHz; EHF; InP; InP HEMT; InP MIMIC amplifier; MM-wave IC; MM-wave amplifier; WR5 waveguide; direct coupling; integral probes; integral waveguide transitions; single-chip amplifier; six-stage amplifier; Gain measurement; Indium phosphide; Integrated circuit measurements; MMICs; Microwave amplifiers; Microwave integrated circuits; Microwave measurements; Monolithic integrated circuits; Probes; Radiofrequency amplifiers;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.774148

Filename

774148