DocumentCode
1526601
Title
InP-based mixed device (HEMT/HBT) technology on planar substrate for high performance mixed-signal and optoelectronic circuits
Author
Kiziloglu, K. ; Yung, M.W. ; Sun, H.C. ; Thomas, S. ; Walden, Robert H ; Brown, J.J. ; Stanchina, William E.
Author_Institution
Hughes Res. Labs., Malibu, CA
Volume
33
Issue
24
fYear
1997
fDate
11/20/1997 12:00:00 AM
Firstpage
2065
Lastpage
2066
Abstract
The authors report the first successful demonstration of an integrated circuit process on planar InP substrates that incorporates a stacked single layer MBE growth of HEMTs and HBTs. In this process, the HBT layers are patterned and selectively wet etched to expose the HEMT layers after the MBE growth is completed. The authors report functional HEMTs and HBTs on the same wafer, with pertinent DC and microwave measurements
Keywords
III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated circuit technology; integrated optoelectronics; mixed analogue-digital integrated circuits; molecular beam epitaxial growth; monolithic integrated circuits; InP; InP-based mixed FET/bipolar technology; mixed HEMT/HBT technology; mixed-signal circuits; optoelectronic circuits; planar InP substrate; stacked single layer MBE growth;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971384
Filename
648479
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