Title :
InP-based mixed device (HEMT/HBT) technology on planar substrate for high performance mixed-signal and optoelectronic circuits
Author :
Kiziloglu, K. ; Yung, M.W. ; Sun, H.C. ; Thomas, S. ; Walden, Robert H ; Brown, J.J. ; Stanchina, William E.
Author_Institution :
Hughes Res. Labs., Malibu, CA
fDate :
11/20/1997 12:00:00 AM
Abstract :
The authors report the first successful demonstration of an integrated circuit process on planar InP substrates that incorporates a stacked single layer MBE growth of HEMTs and HBTs. In this process, the HBT layers are patterned and selectively wet etched to expose the HEMT layers after the MBE growth is completed. The authors report functional HEMTs and HBTs on the same wafer, with pertinent DC and microwave measurements
Keywords :
III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated circuit technology; integrated optoelectronics; mixed analogue-digital integrated circuits; molecular beam epitaxial growth; monolithic integrated circuits; InP; InP-based mixed FET/bipolar technology; mixed HEMT/HBT technology; mixed-signal circuits; optoelectronic circuits; planar InP substrate; stacked single layer MBE growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971384
