• DocumentCode
    1526605
  • Title

    InxGa1-xN/AlyxGa1-xN violet light emitting diodes with reflective p-contacts for high single sided light extraction

  • Author

    Van Roijen, R. ; Kozodoy, P. ; DenBaars, Steven

  • Volume
    33
  • Issue
    24
  • fYear
    1997
  • fDate
    11/20/1997 12:00:00 AM
  • Firstpage
    2066
  • Lastpage
    2068
  • Abstract
    InxGa1-xN/AlyGa1-yN light emitting diode structures (LED) grown epitaxially on sapphire substrates were on-wafer characterised electrically and optically. By replacing standard Ni/Au contacts to p-GaN with Ni/Al layers, the LED output power emission through the sapphire substrate was enhanced by a factor of 2-4. With no significant impact on the operating voltage
  • Keywords
    III-V semiconductors; aluminium compounds; electrical contacts; gallium compounds; indium compounds; light emitting diodes; molecular beam epitaxial growth; semiconductor quantum wells; Al2O3; InxGa1-xN/AlyxGa1-xN LED; InGaN-AlGaN; MQW LED structures; Ni-Al-GaN; Ni/Al contacts; epitaxial growth; high single sided light extraction; reflective p-contacts; sapphire substrates; violet light emitting diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971379
  • Filename
    648480
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1526605