Title :
InxGa1-xN/AlyxGa1-xN violet light emitting diodes with reflective p-contacts for high single sided light extraction
Author :
Van Roijen, R. ; Kozodoy, P. ; DenBaars, Steven
fDate :
11/20/1997 12:00:00 AM
Abstract :
InxGa1-xN/AlyGa1-yN light emitting diode structures (LED) grown epitaxially on sapphire substrates were on-wafer characterised electrically and optically. By replacing standard Ni/Au contacts to p-GaN with Ni/Al layers, the LED output power emission through the sapphire substrate was enhanced by a factor of 2-4. With no significant impact on the operating voltage
Keywords :
III-V semiconductors; aluminium compounds; electrical contacts; gallium compounds; indium compounds; light emitting diodes; molecular beam epitaxial growth; semiconductor quantum wells; Al2O3; InxGa1-xN/AlyxGa1-xN LED; InGaN-AlGaN; MQW LED structures; Ni-Al-GaN; Ni/Al contacts; epitaxial growth; high single sided light extraction; reflective p-contacts; sapphire substrates; violet light emitting diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971379
