Title :
Low polarisation sensitivity electroabsorption modulators for 160 Gbit/s networks
Author :
Moodie, Dave G. ; Cannard, Paul J. ; Ford, C.W. ; Reed, Jeff ; Moore ; Lucek, J.K. ; Ellis, A.D.
Author_Institution :
BT Labs., Ipswich
fDate :
11/20/1997 12:00:00 AM
Abstract :
Packaged low polarisation sensitivity InGaAs-InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160 Gbit/s OTDM systems is experimentally assessed
Keywords :
III-V semiconductors; aluminium compounds; digital communication; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical communication equipment; optical fibre networks; semiconductor quantum wells; time division multiplexing; 160 Gbit/s; InGaAs-InAlAs; InGaAs-InAlAs MQW; OTDM systems; electroabsorption modulators; low polarisation sensitivity; optical TDM networks; packaged devices; ridged deeply etched buried heterostructure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971393
