Title :
Current gain in amorphous silicon hot electron devices
Author :
Shannon, John M. ; Kovsarian, A. ; Curran, J.E.
Author_Institution :
Dept. of Electron. Eng., Surrey Univ., Guildford
fDate :
11/20/1997 12:00:00 AM
Abstract :
Useful current gains have been obtained from hydrogenated amorphous silicon structures containing narrow amorphous silicide base regions. The current gains have been determined from amplification of junction leakage and photo-currents with the base open-circuited. The measurements are consistent with efficient transport of hot electrons across an amorphous silicide base a few nanometres thick
Keywords :
amorphous semiconductors; Si:H-CrSi2; amorphous Si devices; current gain; hot electron devices; hot electron transistor action; hydrogenated amorphous Si structures; junction leakage; narrow amorphous silicide base regions; photocurrents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971374
