MOSFET diode as a feedback reset element on charge amplifiers

Author

Bertuccio, G. ; Fasoli, L. ; Sampietro, M.

Author_Institution

Dipt. di Elettronica, Politecnico di Milano, Italy

Volume

46

Issue

3

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

757

Lastpage

760

Abstract

A MOSFET, connected as a diode with gate and drain short circuited and biased in saturation mode, is proposed as a substitute for the high-value feedback resistor to provide dc feedback and signal reset in integrated charge amplifiers with BJT input transistors. This paper describes the MOSFET design rules to set the desired value of the discharge time constant, to minimize its noise contribution, and to operate it in a low voltage circuit. The behavior of the MOSFET as an almost fixed value resistor is evidenced by the single time-constant discharge of the signal at the output of a prototype preamplifier for fast (<50 ns) shaping, whose experimental noise performance is also reported

Keywords

BiCMOS analogue integrated circuits; MOSFET; feedback amplifiers; integrated circuit design; integrated circuit noise; nuclear electronics; preamplifiers; BiCMOS technology; DC feedback; MOSFET design rules; MOSFET diode; almost fixed value resistor; charge amplifiers; discharge time constant; feedback reset element; noise contribution; preamplifier; saturation mode; time-constant discharge; Diodes; FETs; Feedback circuits; Integrated circuit noise; MOSFET circuits; Noise shaping; Performance analysis; Preamplifiers; Pulse amplifiers; Resistors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.774173

Filename

774173