Title :
MOSFET diode as a feedback reset element on charge amplifiers
Author :
Bertuccio, G. ; Fasoli, L. ; Sampietro, M.
Author_Institution :
Dipt. di Elettronica, Politecnico di Milano, Italy
fDate :
6/1/1999 12:00:00 AM
Abstract :
A MOSFET, connected as a diode with gate and drain short circuited and biased in saturation mode, is proposed as a substitute for the high-value feedback resistor to provide dc feedback and signal reset in integrated charge amplifiers with BJT input transistors. This paper describes the MOSFET design rules to set the desired value of the discharge time constant, to minimize its noise contribution, and to operate it in a low voltage circuit. The behavior of the MOSFET as an almost fixed value resistor is evidenced by the single time-constant discharge of the signal at the output of a prototype preamplifier for fast (<50 ns) shaping, whose experimental noise performance is also reported
Keywords :
BiCMOS analogue integrated circuits; MOSFET; feedback amplifiers; integrated circuit design; integrated circuit noise; nuclear electronics; preamplifiers; BiCMOS technology; DC feedback; MOSFET design rules; MOSFET diode; almost fixed value resistor; charge amplifiers; discharge time constant; feedback reset element; noise contribution; preamplifier; saturation mode; time-constant discharge; Diodes; FETs; Feedback circuits; Integrated circuit noise; MOSFET circuits; Noise shaping; Performance analysis; Preamplifiers; Pulse amplifiers; Resistors;
Journal_Title :
Nuclear Science, IEEE Transactions on