Title :
Continuous charge restoration in semiconductor detectors by means of the gate-to-drain current of the integrated front-end JFET
Author :
Fiorini, Carlo ; Lechner, Peter
Author_Institution :
Dipt. di Elettronica, Politecnico di Milano, Italy
fDate :
6/1/1999 12:00:00 AM
Abstract :
A continuous reset method for discharging the leakage current and the signal charge in semiconductor radiation detectors with on-chip electronics has been studied and experimentally verified. The charge collected at the output electrode of the detector is discharged by means of the gate-to-drain current of the front-end JFET integrated in the detector itself. The suitable value of gate current is reached by means of a “weak” avalanche breakdown mechanism which occurs in a high-field region of the transistor channel. When the JFET is operated in a source follower configuration, this mechanism is self-adapting to new values of leakage or signal currents
Keywords :
JFET integrated circuits; avalanche breakdown; leakage currents; nuclear electronics; semiconductor device breakdown; silicon radiation detectors; Si; continuous charge restoration; continuous reset method; gate current; gate-to-drain current; high-field region; integrated front-end JFET; leakage current; on-chip electronics; semiconductor detectors; semiconductor radiation detectors; signal charge; source follower configuration; transistor channel; weak avalanche breakdown mechanism; Anodes; Electrodes; Electrons; Leak detection; Leakage current; Radiation detectors; Semiconductor radiation detectors; Silicon; X-ray detection; X-ray detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
