Continuous charge restoration in semiconductor detectors by means of the gate-to-drain current of the integrated front-end JFET

Author

Fiorini, Carlo ; Lechner, Peter

Author_Institution

Dipt. di Elettronica, Politecnico di Milano, Italy

Volume

46

Issue

3

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

761

Lastpage

764

Abstract

A continuous reset method for discharging the leakage current and the signal charge in semiconductor radiation detectors with on-chip electronics has been studied and experimentally verified. The charge collected at the output electrode of the detector is discharged by means of the gate-to-drain current of the front-end JFET integrated in the detector itself. The suitable value of gate current is reached by means of a “weak” avalanche breakdown mechanism which occurs in a high-field region of the transistor channel. When the JFET is operated in a source follower configuration, this mechanism is self-adapting to new values of leakage or signal currents

Keywords

JFET integrated circuits; avalanche breakdown; leakage currents; nuclear electronics; semiconductor device breakdown; silicon radiation detectors; Si; continuous charge restoration; continuous reset method; gate current; gate-to-drain current; high-field region; integrated front-end JFET; leakage current; on-chip electronics; semiconductor detectors; semiconductor radiation detectors; signal charge; source follower configuration; transistor channel; weak avalanche breakdown mechanism; Anodes; Electrodes; Electrons; Leak detection; Leakage current; Radiation detectors; Semiconductor radiation detectors; Silicon; X-ray detection; X-ray detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.774174

Filename

774174