Title :
0.3 dB minimum noise figure at 2.5 GHz of 0.13 μm Si/Si0.58 Ge0.42 n-MODFETs
Author :
Enciso, M. ; Aniel, F. ; Crozat, P. ; Adde, R. ; Zeuner, M. ; Fox, A. ; Hackbarth, T.
Author_Institution :
Inst. d´´Electron. Fondamentale, Paris-Sud Univ., Orsay, France
fDate :
8/16/2001 12:00:00 AM
Abstract :
RF and microwave noise performances of strained Si/Si0.58 Ge0.42 n-MODFETs are presented for the first time. The 0.13 μm gate devices have de-embedded fT=49 GHz, fmax =70 GHz and a record intrinsic gm=700 mS/mm. A de-embedded minimum noise figure NFmin=0.3 dB with a 41 Ω noise resistance Rn and a 19 dB associated gain Gass are obtained at 2.5 GHz, while NFmin=2.0 dB with Gass=10 dB at 18 GHz. The noise parameters measured up to 18 GHz and from 10 to 180 mA/mm with high gain and low power dissipation show the potential of SiGe MODFETs for mobile communications
Keywords :
Ge-Si alloys; UHF field effect transistors; elemental semiconductors; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; silicon; 0.13 μm gate devices; 0.13 mum; 0.3 dB; 10 dB; 18 GHz; 19 dB; 2 dB; 2.5 GHz; 49 GHz; 70 GHz; 700 mS/mm; RF noise performance; Si-Si0.58Ge0.42; Si/Si0.58Ge0.42 n-MODFETs; de-embedded minimum noise figure; high gain; low power dissipation; microwave noise performance; minimum noise figure; mobile communications; noise resistance; strained Si/Si0.58Ge0.42 layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010708
