• DocumentCode
    1526907
  • Title

    Nickel ohmic contacts to p and n-type 4H-SiC

  • Author

    Fursin, L.G. ; Zhao, Jun Hua ; Weiner, M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
  • Volume
    37
  • Issue
    17
  • fYear
    2001
  • fDate
    8/16/2001 12:00:00 AM
  • Firstpage
    1092
  • Lastpage
    1093
  • Abstract
    The first demonstration of Ni ohmic contacts to both p+ and n+ 4H-SiC formed by ion implantation is reported. Sample preparation conditions are described and experimental results presented. Specific contact resistances in the range of 10-4 Ω cm 2 and 10-6 Ω cm2 for p+ and n+ 4H-SiC, respectively, have been determined by the transfer length method
  • Keywords
    contact resistance; ion implantation; nickel; ohmic contacts; semiconductor-metal boundaries; silicon compounds; wide band gap semiconductors; Ni ohmic contacts; Ni-SiC; SiC epilayers; ion implantation; n+ 4H-SiC; p+ 4H-SiC; sample preparation conditions; specific contact resistances; transfer length method;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010738
  • Filename
    948345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1526907