Title :
Static measurements of GaN MESFETs on (111) Si substrates
Author :
Hoël, V. ; Guhel, Y. ; Boudart, B. ; Gaquière, C. ; De Jaeger, J.C. ; Lahrèche, H. ; Gibart, P.
Author_Institution :
USTL, Villeneuve d´´Ascq, France
fDate :
8/16/2001 12:00:00 AM
Abstract :
For the first time, to the knowledge of the authors, GaN MESFETs on silicon substrates have been realised using low-pressure metal-organic vapour phase epitaxy. The devices demonstrate good pinch-off voltage and good breakdown voltage characteristics. A maximum extrinsic transconductance of 30 mS/mm was achieved on a 100 * 0.5 μm 2 device. At a drain-to-source voltage of 30 V, the drain current density reaches 100 mA/mm at Vgs=0 V
Keywords :
III-V semiconductors; MOCVD; current density; gallium compounds; power MESFET; semiconductor device breakdown; semiconductor device measurement; wide band gap semiconductors; (111) Si substrates; 30 V; 30 mS/mm; GaN MESFETs; GaN-Si; Si; breakdown voltage characteristics; drain current density; drain-to-source voltage; low-pressure metal-organic vapour phase epitaxy; maximum extrinsic transconductance; pinch-off voltage; static measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010740
