A comparison of IGBT models for use in circuit design

Author

Githiari, Anthony N. ; Gordon, Benjamin M. ; McMahon, Richard A. ; Li, Zhong-Min ; Mawby, Philip A.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

14

Issue

4

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

607

Lastpage

614

Abstract

In choosing an accurate insulated gate bipolar transistor (IGBT) model for power electronic circuit design, physics-based models are frequently preferred due to their high accuracy and fast simulation speed in comparison to other types of models. In this paper, an experimental comparison of two such models is made, using parameters extracted from experimental measurements. The comparison focuses on two particular IGBTs-the BUP202 and the BUK854-representing the two common types of IGBT, respectively, the nonpunchthrough and the punchthrough IGBT. The models are investigated for the IGBT´s operation in three situations typical of low-power (600 V, 10 A) applications

Keywords

insulated gate bipolar transistors; semiconductor device models; 10 A; 600 V; BUK854; BUP202; Hefner model; IGBT models comparison; Kraus model; circuit design; insulated gate bipolar transistor; low-power operation; nonpunchthrough IGBT; parameters extraction; physics-based models; power electronic circuit design; punchthrough IGBT; Acceleration; Circuit simulation; Circuit synthesis; Computational modeling; Insulated gate bipolar transistors; Parameter extraction; Power electronics; Power system modeling; Pulse width modulation; Space vector pulse width modulation;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.774196

Filename

774196