DocumentCode :
1526925
Title :
Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax=425 GHz
Author :
Lee, S. ; Kim, H.J. ; Urteaga, M. ; Krishnan, S. ; Wei, Y. ; Dahlstrom, M. ; Rodwell, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
37
Issue :
17
fYear :
2001
fDate :
8/16/2001 12:00:00 AM
Firstpage :
1096
Lastpage :
1098
Abstract :
InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) with fmax=425 GHz and fτ=141 GHz using transferred-substrate technology are reported. This is the highest reported fmax for a DHBT. The breakdown voltage BVCEO is 8 V at JC=5×104 A/cm2 and the DC current gain β is 43
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; millimetre wave bipolar transistors; millimetre wave power transistors; power bipolar transistors; semiconductor device breakdown; semiconductor device measurement; 141 GHz; 425 GHz; 8 V; DC current gain; InP-InGaAs-InP; InP/InGaAs/InP DHBTs; breakdown voltage; high speed high power applications; maximum frequency of oscillation; transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors; transferred-substrate technology;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010728
Filename :
948348
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1526925
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