Title :
Effect of Grain Orientation on NBTI Variation and Recovery in Emerging Metal-Gate Devices
Author :
Rasouli, Seid Hadi ; Banerjee, Kaustav
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
This letter identifies and investigates the effect of grain orientation (GO) on negative-bias temperature instability (NBTI) characteristics of emerging metal-gate devices. A modified reaction-diffusion model is presented for estimating the effect of GO on NBTI. It is shown that neglecting the GO effect leads to substantial underestimation of the impact of the gate-oxide electric field (EOX) on the threshold voltage degradation (ΔVTH). Moreover, GO results in significant fluctuation in EOX and, hence, fluctuation in NBTI for ultrascaled CMOS devices. In addition, in FinFETs, stand-alone GO-induced gate-oxide electric field not only results in ΔVTH fluctuation but also decelerates the recovery process.
Keywords :
CMOS integrated circuits; MOSFET; electric field effects; FinFET; NBTI; gate-oxide electric field; grain orientation; metal-gate device; negative-bias temperature instability; reaction-diffusion model; threshold voltage degradation; ultrascaled CMOS device; Grain orientation (GO); metal gate; negative-bias temperature instability (NBTI); work-function (WF) variation (WFV);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2051403
