DocumentCode :
1527121
Title :
Optimisation of the properties of high-T/sub c/ thick films
Author :
Shields, T.C. ; Langhorn, J.B. ; Watcham, S.C. ; Abell, J.S. ; Button, T.W.
Author_Institution :
Sch. of Metall. & Mater., Birmingham Univ., UK
Volume :
7
Issue :
2
fYear :
1997
fDate :
6/1/1997 12:00:00 AM
Firstpage :
1478
Lastpage :
1481
Abstract :
High-T/sub c/ thick films of YBa/sub 2/Cu/sub 3/O/sub 7-/spl part// (YBCO) are potentially useful in various applications; for example in practical fault current limiters in the field of power engineering. The material also shows promise in the fabrication of numerous microwave devices. However it is of paramount importance to optimise their microstructure and properties, with particular respect to the critical current density (J/sub c/) and surface resistance (R/sub s/). Doping and barrier layer technology have been used to improve the characteristics of the films. Enhanced current carrying capacity is achieved as a result of doping with Pt and a Ba/sub 4/Cu/sub 1+x/Pt/sub 2-x/O/sub 9-z/ (0412) compound Exploitation of low dielectric loss and economically attractive alumina substrates has also been achieved, by means of barrier layers. The relation between the processing, microstructure and superconducting behaviour is reported.
Keywords :
barium compounds; critical current density (superconductivity); crystal microstructure; current limiters; dielectric losses; high-temperature superconductors; impurities; platinum; superconducting microwave devices; surface conductivity; thick films; yttrium compounds; YBa/sub 2/Cu/sub 3/O/sub 7-/spl part//:Pt,Ba/sub 4/Cu/sub 1+x/Pt/sub 2-x/O/sub 9-z/; YBa/sub 2/Cu/sub 3/O/sub 7/:Pt,Ba/sub 4/CuPt/sub 2/O/sub 9/; barrier layer technology; critical current density; current carrying capacity; dielectric loss; doping; economically attractive alumina substrates; fault current limiters; high-T/sub c/ thick films; microstructure; microwave devices; power engineering; processing; superconducting behaviour; surface resistance; Dielectric losses; Dielectric substrates; Doping; Fault current limiters; Microstructure; Power engineering; Superconducting microwave devices; Surface resistance; Thick films; Yttrium barium copper oxide;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/77.620852
Filename :
620852
Link To Document :
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