Title :
Terahertz edge detection with antenna-coupled field-effect transistors in 0.25 μm AlGaN/GaN technology
Author :
Boppel, S. ; Ragauskas, M. ; Hajo, A. ; Bauer, Matthias ; Lisauskas, Alvydas ; Chevtchenko, Serguei ; Ramer, A. ; Kasalynas, I. ; Valusis, G. ; Wurfl, Joachim ; Heinrich, Wolfgang ; Trankle, Gunther ; Krozer, V. ; Roskos, Hartmut G.
Author_Institution :
Phys. Inst., Johann Wolfgang Goethe Univ., Frankfurt am Main, Germany
Abstract :
Bow-tie antenna coupled field-effect transistors have been implemented in 0.25 μm AlGaN/GaN process technology and have been mounted on an aplanatic hemispherical silicon substrate lens. By asymmetric coupling of 590-GHz radiation to the channel, the transistors are used as direct power detectors, achieving system noise-equivalent power values of 166 pW/√Hz at 590 GHz (referred to the total beam power). By symmetric coupling, edge detection is achieved on a device level.
Keywords :
III-V semiconductors; aluminium compounds; bow-tie antennas; edge detection; elemental semiconductors; field effect transistors; gallium compounds; lenses; silicon; submillimetre wave transistors; terahertz wave detectors; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN technology; Si; antenna coupled field effect transistors; aplanatic hemispherical silicon substrate lens; asymmetric coupling; bow-tie antenna; direct power detectors; frequency 590 GHz; size 0.25 mum; terahertz edge detection; Aluminum gallium nitride; Antennas; Couplings; Detectors; Gallium nitride; Image edge detection; Transistors;
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
DOI :
10.1109/IRMMW-THz.2014.6956066
