Terahertz edge detection with antenna-coupled field-effect transistors in 0.25 μm AlGaN/GaN technology

Author

Boppel, S. ; Ragauskas, M. ; Hajo, A. ; Bauer, Matthias ; Lisauskas, Alvydas ; Chevtchenko, Serguei ; Ramer, A. ; Kasalynas, I. ; Valusis, G. ; Wurfl, Joachim ; Heinrich, Wolfgang ; Trankle, Gunther ; Krozer, V. ; Roskos, Hartmut G.

Author_Institution

Phys. Inst., Johann Wolfgang Goethe Univ., Frankfurt am Main, Germany

fYear

2014

fDate

14-19 Sept. 2014

Firstpage

1

Lastpage

1

Abstract

Bow-tie antenna coupled field-effect transistors have been implemented in 0.25 μm AlGaN/GaN process technology and have been mounted on an aplanatic hemispherical silicon substrate lens. By asymmetric coupling of 590-GHz radiation to the channel, the transistors are used as direct power detectors, achieving system noise-equivalent power values of 166 pW/√Hz at 590 GHz (referred to the total beam power). By symmetric coupling, edge detection is achieved on a device level.

Keywords

III-V semiconductors; aluminium compounds; bow-tie antennas; edge detection; elemental semiconductors; field effect transistors; gallium compounds; lenses; silicon; submillimetre wave transistors; terahertz wave detectors; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN technology; Si; antenna coupled field effect transistors; aplanatic hemispherical silicon substrate lens; asymmetric coupling; bow-tie antenna; direct power detectors; frequency 590 GHz; size 0.25 mum; terahertz edge detection; Aluminum gallium nitride; Antennas; Couplings; Detectors; Gallium nitride; Image edge detection; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on

Conference_Location

Tucson, AZ

Type

conf

DOI

10.1109/IRMMW-THz.2014.6956066

Filename

6956066