Ultrafast monolithically integrated InP-based photoreceiver: OEIC-design, fabrication, and system application

Author

Bach, H.-G. ; Umbach, A. ; Van Waasen, S. ; Bertenburg, R.M. ; Unterbörsch, G.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

Volume

2

Issue

2

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

418

Lastpage

424

Abstract

An InP-based photoreceiver OEIC for λ=1.55 μm with a bandwidth of 27 GHz is reported. The receiver design, fabrication and characterization is presented. The device consists of an optical waveguide-fed pin-photodiode and a coplanar traveling-wave amplifier being composed of four GaInAs-AlInAs-InP-HEMT´s. The photodiode exhibits an external quantum efficiency of 30% and a 3-dB power bandwidth of 35 GHz. HEMT´s with 0.7-μm gate length, integrated on semi-insulating optical waveguide layers show cutoff frequencies f_T/f_max of 37/100 GHz at zero gate bias. Traveling-wave amplifiers with 0.5-μm gate HEMT´s have 28-GHz bandwidth. The receiver OEIC is packaged into a module with fiber pigtail and operates successfully within an SDH based 20-Gb/s transmission system. An overall system sensitivity of -30.5 dBm was achieved at a BER=10^-9 after signal transmission over 198-km dispersion shifted fiber

Keywords

HEMT integrated circuits; III-V semiconductors; high-speed optical techniques; indium compounds; integrated circuit design; integrated circuit packaging; integrated optoelectronics; optical design techniques; optical fabrication; optical noise; optical receivers; p-i-n photodiodes; sensitivity; time division multiplexing; 0.7 mum; 1.55 mum; 198 km; 20 Gbit/s; 27 GHz; 30 percent; 35 GHz; GaInAs-AlInAs-InP; GaInAs-AlInAs-InP-HEMT´s; Gb/s transmission system; InP; InP-based photoreceiver OEIC; OEIC-design; coplanar traveling-wave amplifier; cutoff frequencies; dB power bandwidth; dispersion shifted fiber; external quantum efficiency; fiber pigtail; gate length; optical waveguide-fed pin-photodiode; overall system sensitivity; receiver OEIC packaging; receiver design; receiver fabrication; semi-insulating optical waveguide layers; signal transmission; system application; traveling-wave amplifiers; ultrafast monolithically integrated InP-based photoreceiver; zero gate bias; Bandwidth; HEMTs; Optical amplifiers; Optical device fabrication; Optical receivers; Optical sensors; Optical waveguides; Optoelectronic devices; Stimulated emission; Ultrafast optics;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.577404

Filename

577404