DocumentCode :
1527471
Title :
Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline- 
-Based Resistive-Switching Memory Devices
Author :
Lee, Jung-Kyu ; Cho, In-Tak ; Kwon, Hyuck-In ; Hwang, Cheol Seong ; Park, Chan Hyeong ; Lee, Jong-Ho
Author_Institution :
Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea
Volume :
33
Issue :
7
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
1063
Lastpage :
1065
Abstract :
Low-frequency noise (LFN) characteristics have been studied in polycrystalline- TiOx-based resistive random access memories (RRAMs). LFNs are proportional to 1/f in high-resistance state (HRS), but those in low-resistance state (LRS) are proportional to 1/f only in less than ~100 Hz. The normalized noise power in HRS is around three orders of magnitude higher than that in LRS. Bias dependence of 1/f noise shows that the current conduction mechanisms from noise measurements are consistent with those from the current-voltage relationships in TiOx-based unipolar RRAM devices.
Keywords :
1/f noise; noise measurement; random-access storage; titanium compounds; 1/f noise; HRS; LFN; LRS; TiOx; bias dependence; conduction mechanism; current-voltage relationships; high-resistance state; low-frequency noise characteristics; low-resistance state; noise measurements; normalized noise power; polycrystalline-based resistive-switching memory devices; resistive random access memories; unipolar RRAM devices; Current measurement; Noise; Noise measurement; Random access memory; Silicon; Switches; Temperature measurement; Conduction mechanism; low-frequency noise (LFN); resistive random access memory (RRAM); resistive switching;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2196670
Filename :
6208813
Link To Document :
