Title :
High-current, planar-doped pseudomorphic Ga0.4In0.6 As/Al0.48In0.52As HEMTs
Author :
Fathimulla, A. ; Hier, H. ; Abrahams, J.
Author_Institution :
Allied-Signal Aerosp. Co., Columbia, MD
fDate :
5/26/1988 12:00:00 AM
Abstract :
The authors report the first successful growth and fabrication of high-performance, planar-doped pseudomorphic GaInAs/AlInAs HEMTs. Hall mobilities as high as 11900 cm2/Vs (300 K) with sheet-electron concentrations of 2.4×1012 cm-2 were measured for the heterostructures. A drain-saturation current of 1 A/mm, a transconductance of 420 mS/mm, and an extrapolated ft of 64 GHz were achieved in a 0.5 μm gate-length HEMT
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.5 micron; 420 mS; 64 GHz; EHF; Ga0.4In0.6As-Al0.48In0.52 As; HEMTs; Hall mobilities; MODFET; SHF; drain-saturation current; extrapolated cutoff frequency; fabrication; growth; heterostructures; high current operation; high-performance; planar doped pseudomorphic structure; sheet-electron concentrations; solid state microwave devices; submicron gate length; transconductance;
Journal_Title :
Electronics Letters
