• DocumentCode
    1527521
  • Title

    High-current, planar-doped pseudomorphic Ga0.4In0.6 As/Al0.48In0.52As HEMTs

  • Author

    Fathimulla, A. ; Hier, H. ; Abrahams, J.

  • Author_Institution
    Allied-Signal Aerosp. Co., Columbia, MD
  • Volume
    24
  • Issue
    11
  • fYear
    1988
  • fDate
    5/26/1988 12:00:00 AM
  • Firstpage
    717
  • Lastpage
    718
  • Abstract
    The authors report the first successful growth and fabrication of high-performance, planar-doped pseudomorphic GaInAs/AlInAs HEMTs. Hall mobilities as high as 11900 cm2/Vs (300 K) with sheet-electron concentrations of 2.4×1012 cm-2 were measured for the heterostructures. A drain-saturation current of 1 A/mm, a transconductance of 420 mS/mm, and an extrapolated ft of 64 GHz were achieved in a 0.5 μm gate-length HEMT
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.5 micron; 420 mS; 64 GHz; EHF; Ga0.4In0.6As-Al0.48In0.52 As; HEMTs; Hall mobilities; MODFET; SHF; drain-saturation current; extrapolated cutoff frequency; fabrication; growth; heterostructures; high current operation; high-performance; planar doped pseudomorphic structure; sheet-electron concentrations; solid state microwave devices; submicron gate length; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5775
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1527521