Title :
Two-dimensional modeling and simulation for dynamic sheath expansion during plasma immersion ion implantation
Author :
Qin, Shu ; Yuanzhong Xhou ; Chan, Chung
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
fDate :
6/1/1999 12:00:00 AM
Abstract :
A pseudo two-dimensional (2-D) analytical model and a 2-D plasma simulator PDP2 code have been utilized to characterize ion-matrix sheath and dynamic sheath expansion during the plasma immersion ion implantation process. The pseudo 2-D model is very simple by involving two geometry factors and yields an acceptable accuracy under the current process conditions. Good agreement between the pseudo 2-D model and PDP2 simulation was observed
Keywords :
ion implantation; plasma impurities; plasma materials processing; plasma sheaths; plasma simulation; 2D plasma simulator; PDP2 code; PDP2 simulation; dynamic sheath expansion; geometry factors; ion-matrix sheath; plasma immersion ion implantation; plasma immersion ion implantation process; process conditions; pseudo 2D model; pseudo two-dimensional analytical model; two-dimensional model; two-dimensional simulation; Analytical models; Implants; Plasma immersion ion implantation; Plasma sheaths; Plasma simulation; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Silicon; Two dimensional displays;
Journal_Title :
Plasma Science, IEEE Transactions on