• DocumentCode
    1527691
  • Title

    Ultrathin Silicon Chips of Arbitrary Shape by Etching Before Grinding

  • Author

    Herwik, S. ; Paul, O. ; Ruther, P.

  • Author_Institution
    Dept. of Microsyst. Eng., Univ. of Freiburg, Freiburg, Germany
  • Volume
    20
  • Issue
    4
  • fYear
    2011
  • Firstpage
    791
  • Lastpage
    793
  • Abstract
    A complementary-metal-oxide-semiconductor-compatible fabrication technique for ultrathin silicon chips of arbitrary shape is reported. It combines deep reactive ion etching and wafer grinding to define the in-plane geometry and thickness of the chips, respectively. Neural probes with shaft lengths up to 12 mm and thicknesses down to 25 μm were fabricated.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; grinding; silicon; sputter etching; complementary-metal-oxide-semiconductor-compatible fabrication technique; deep reactive ion etching; neural probes; ultrathin silicon chips; wafer grinding; Fabrication; Metamaterials; Micromechanical devices; Periodic structures; Probes; Silicon; Substrates; Grinding; separation technique; ultrathin microelectromechanical systems (MEMS);
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2011.2148159
  • Filename
    5776632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1527691