Improved single-ended solutions for ultrawide-band monolithic GaAs amplifiers

New circuit topologies for wide band frequency response in multistage single-ended active-match GaAs amplifiers are presented. A novel compensation technique to equalise the high frequency performance has been successfully implemented. Two subsequent realisations employing standard 0.5 μm low-noise GaAs MESFET technology exhibit major improvements in the measured performance, due to the enhanced circuit topology. A -3 dB bandwidth up to 5.5 GHz from quasi-DC, a transition time better than 50 ps with an overshoot of less than 10%, have been achieved. Variable gain ranges from 5 to 18 dB, depending on the imposed bias, with very good phase linearity. Active input and output broadband matching networks have been implemented