Improved single-ended solutions for ultrawide-band monolithic GaAs amplifiers

Author

Giannini, F. ; Limiti, E. ; Orengo, G.

Author_Institution

Dept. of Electron. Eng., Rome Univ., Italy

Volume

144

Issue

6

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

458

Lastpage

466

Abstract

New circuit topologies for wide band frequency response in multistage single-ended active-match GaAs amplifiers are presented. A novel compensation technique to equalise the high frequency performance has been successfully implemented. Two subsequent realisations employing standard 0.5 μm low-noise GaAs MESFET technology exhibit major improvements in the measured performance, due to the enhanced circuit topology. A -3 dB bandwidth up to 5.5 GHz from quasi-DC, a transition time better than 50 ps with an overshoot of less than 10%, have been achieved. Variable gain ranges from 5 to 18 dB, depending on the imposed bias, with very good phase linearity. Active input and output broadband matching networks have been implemented

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; gallium arsenide; impedance matching; network topology; wideband amplifiers; 0.5 micron; 5 to 18 dB; 5.5 GHz; 50 ohm; GaAs; III V semiconductor; active input broadband matching network; active output broadband matching network; bandwidth; bias; circuit topologies; compensation technique; equalising techniques; high frequency performance; low-noise MESFET technology; measured performance; multistage single-ended active-match amplifiers; overshoot; phase linearity; transition time; ultrawide-band monolithic amplifiers; variable gain; wide band frequency response;

fLanguage

English

Journal_Title

Microwaves, Antennas and Propagation, IEE Proceedings

Publisher

iet

ISSN

1350-2417

Type

jour

DOI

10.1049/ip-map:19971328

Filename

649300