Title :
High-Speed Selector–Driver Using Abrupt Delta-Doped InP/InGaAs/InP DHBTs
Author :
Driad, R. ; Makon, R.E. ; Ritter, D.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
This letter reports the potential of an InP-based double-heterojunction bipolar transistor (DHBT) using a thin highly doped n+-InP layer inserted at the base-collector junction. Molecular-beam-epitaxy-grown abrupt pulse-doped InP-InGaAs-InP DHBTs ensure very high current gains of ~ 90, low saturation voltages of less than 1 V, and high cutoff frequencies of ~ 350 GHz. Using this technology, a compact high-speed high-voltage multiplexer-driver integrated circuit (IC) suitable for high-speed signal processing and communication systems has been designed and fabricated. The IC has successfully been measured at 112 Gb/s with very clear eye openings of up to 2 Vpp with a power consumption of 2 W.
Keywords :
III-V semiconductors; driver circuits; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; low-power electronics; molecular beam epitaxial growth; power integrated circuits; semiconductor doping; InP-InGaAs-InP; base-collector junction; communication systems; delta doped DHBT; double heterojunction bipolar transistor; high-speed high-voltage multiplexer-driver integrated circuit; high-speed selector-driver; high-speed signal processing; molecular beam epitaxy growth; power consumption; pulse-doped DHBT; saturation voltages; Doping; Double heterojunction bipolar transistors; Fabrication; Indium gallium arsenide; Indium phosphide; Integrated circuits; Multiplexing; Double-heterojunction bipolar transistors (DHBTs); InP; integrated circuit technology; pulse doping;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2151173
