High-Speed Selector–Driver Using Abrupt Delta-Doped InP/InGaAs/InP DHBTs

Author

Driad, R. ; Makon, R.E. ; Ritter, D.

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

Volume

32

Issue

8

fYear

2011

Firstpage

1059

Lastpage

1061

Abstract

This letter reports the potential of an InP-based double-heterojunction bipolar transistor (DHBT) using a thin highly doped n⁺-InP layer inserted at the base-collector junction. Molecular-beam-epitaxy-grown abrupt pulse-doped InP-InGaAs-InP DHBTs ensure very high current gains of ~ 90, low saturation voltages of less than 1 V, and high cutoff frequencies of ~ 350 GHz. Using this technology, a compact high-speed high-voltage multiplexer-driver integrated circuit (IC) suitable for high-speed signal processing and communication systems has been designed and fabricated. The IC has successfully been measured at 112 Gb/s with very clear eye openings of up to 2 V_pp with a power consumption of 2 W.

Keywords

III-V semiconductors; driver circuits; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; low-power electronics; molecular beam epitaxial growth; power integrated circuits; semiconductor doping; InP-InGaAs-InP; base-collector junction; communication systems; delta doped DHBT; double heterojunction bipolar transistor; high-speed high-voltage multiplexer-driver integrated circuit; high-speed selector-driver; high-speed signal processing; molecular beam epitaxy growth; power consumption; pulse-doped DHBT; saturation voltages; Doping; Double heterojunction bipolar transistors; Fabrication; Indium gallium arsenide; Indium phosphide; Integrated circuits; Multiplexing; Double-heterojunction bipolar transistors (DHBTs); InP; integrated circuit technology; pulse doping;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2151173

Filename

5776652