• DocumentCode
    1527849
  • Title

    Series Resistance Extraction in Poly-Si TFTs With Channel Length and Mobility Variations

  • Author

    Zhou, Yan ; Wang, Mingxiang ; Wong, Man

  • Author_Institution
    Dept. of Microelectron., Soochow Univ., Suzhou, China
  • Volume
    32
  • Issue
    7
  • fYear
    2011
  • fDate
    7/1/2011 12:00:00 AM
  • Firstpage
    901
  • Lastpage
    903
  • Abstract
    A new method to extract the series resistance (Rs) of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) is proposed. Different from conventional methods, this method is based on an analytical poly-Si TFT model and is insensitive to channel length and mobility variations. This method is demonstrated in both n- and p-type poly-Si TFTs.
  • Keywords
    thin film transistors; channel length; mobility variation; n-type poly-Si TFT; p-type poly-Si TFT; polycrystalline silicon thin-film transistor; series resistance extraction; Logic gates; MOSFETs; Resistance; Silicon; Thin film transistors; Polycrystalline silicon (poly-Si); series resistance; thin-film transistors (TFTs);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2142391
  • Filename
    5776654
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1527849