Development of thick orientation patterned GaP for frequency conversion in the Mid IR and THz region

Author

Vangala, Shivashankar ; Tassev, Vladimir ; Kimani, M. ; Snure, Michael ; Mann, M. ; Peterson, Ronald

Author_Institution

Sensors Directorate, Air Force Res. Lab., Wright-Patterson AFB, OH, USA

fYear

2014

fDate

14-19 Sept. 2014

Firstpage

1

Lastpage

2

Abstract

Hydride vapor phase epitaxial growth of thick GaP was performed on plain substrates and on half-patterned templates in order to determine the favorable pattern orientations and the optimal growth conditions for thick device quality orientation patterned GaP. Initial optical characterization and testing of frequency conversion in the grown OPGaP are in progress.

Keywords

III-V semiconductors; gallium compounds; optical frequency conversion; optical testing; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; GaP; THz region; frequency conversion; half-patterned templates; hydride vapor phase epitaxial growth; mid IR region; optical characterization; optical testing; plain substrates; thick orientation patterned gallium phosphide; Epitaxial growth; Frequency conversion; Gallium arsenide; Inductors; Morphology; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on

Conference_Location

Tucson, AZ

Type

conf

DOI

10.1109/IRMMW-THz.2014.6956104

Filename

6956104