Title :
Demonstration of 140 A, 800 V 4H-SiC pin/Schottky barrier diodes with multi-step junction termination extension structures
Author :
Alexandrov, P. ; Zhao, J.H. ; Wright, W. ; Pan, M. ; Weiner, M.
Author_Institution :
United Silicon Carbide Inc., New Brunswick, NJ, USA
fDate :
8/30/2001 12:00:00 AM
Abstract :
DC test results of MPS diodes using multi-step junction termination extension (MJTE) designs are presented. The measurements include reverse leakage current, breakdown, and forward voltage drop. The MJTE design allows full utilisation of the large breakdown properties of SiC. Packaged diodes, containing multiple MPS cells with MJTE designs, are also described
Keywords :
Schottky diodes; leakage currents; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; semiconductor device packaging; semiconductor device testing; silicon compounds; wide band gap semiconductors; 140 A; 4H-SiC pin/Schottky barrier diodes; 800 V; DC test results; MPS diodes; SiC; breakdown; forward voltage drop; multi-step junction termination extension structures; multiple MPS cells; packaged diodes; reverse leakage current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010777
