Ku-band (12.6 GHz) SiGe/Si high-power heterojunction bipolar transistors

Author

Ma, Z. ; Mohammadi, S. ; Bhattacharya, P. ; Katehi, L.P.B. ; Alterovitz, S.A. ; Ponchak, G.E. ; Strohm, K.M. ; Luy, J.-F.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

37

Issue

18

fYear

2001

fDate

8/30/2001 12:00:00 AM

Firstpage

1140

Lastpage

1142

Abstract

Large-area multifinger Si_0.7Ge_0.3/Si heterojunction bipolar transistors for high-power and high-frequency operation have been designed, fabricated and characterised. For a nine-emitter finger device, an f_max of 100 GHz was achieved with a maximum available gain of 14 dB. The peak power-added efficiency in the Ku-band (12.6 GHz) in the common-base configuration for a 15-emitter finger device was 23% with associated power gain of 7.4 dB and an output power of 22 dBm under class AB operation. The device delivered a maximum output power of 24.4 dBm under the same matching conditions

Keywords

Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device measurement; silicon; 100 GHz; 12.6 GHz; 14 dB; 23 percent; 7.4 dB; Ku-band SiGe/Si high-power HBT; Si_0.7Ge_0.3-Si; class AB operation; common-base configuration; heterojunction bipolar transistors; high-power high-frequency operation; large-area multifinger HBT; matching conditions; maximum output power; nine-emitter finger device; peak power-added efficiency; power gain;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20010770

Filename

948958