Title :
Ku-band (12.6 GHz) SiGe/Si high-power heterojunction bipolar transistors
Author :
Ma, Z. ; Mohammadi, S. ; Bhattacharya, P. ; Katehi, L.P.B. ; Alterovitz, S.A. ; Ponchak, G.E. ; Strohm, K.M. ; Luy, J.-F.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
8/30/2001 12:00:00 AM
Abstract :
Large-area multifinger Si0.7Ge0.3/Si heterojunction bipolar transistors for high-power and high-frequency operation have been designed, fabricated and characterised. For a nine-emitter finger device, an fmax of 100 GHz was achieved with a maximum available gain of 14 dB. The peak power-added efficiency in the Ku-band (12.6 GHz) in the common-base configuration for a 15-emitter finger device was 23% with associated power gain of 7.4 dB and an output power of 22 dBm under class AB operation. The device delivered a maximum output power of 24.4 dBm under the same matching conditions
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device measurement; silicon; 100 GHz; 12.6 GHz; 14 dB; 23 percent; 7.4 dB; Ku-band SiGe/Si high-power HBT; Si0.7Ge0.3-Si; class AB operation; common-base configuration; heterojunction bipolar transistors; high-power high-frequency operation; large-area multifinger HBT; matching conditions; maximum output power; nine-emitter finger device; peak power-added efficiency; power gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010770
