Title :
Transistor action in GaP/TmP/GaAs heterostructure
Author :
Lin, Ching-Hsi ; Hwu, R.J. ; Sadwick, L.P.
Author_Institution :
Dept. of Mater. Sci. & Eng., Utah Univ., Salt Lake City, UT, USA
fDate :
8/30/2001 12:00:00 AM
Abstract :
Transistor action in a gallium phosphide/thulium phosphide/gallium arsenide (GaP/TmP/GaAs) structure with a GaP emitter, TmP base, and GaAs collector is reported. The emitter-base junction was constructed through wafer bonding and the base-collector junction was formed by epitaxial growth of TmP on GaAs in a molecular beam epitaxy system. From the I-V measurements, a common base current gain α≃0.55 measured at V CB=0 was obtained at room temperature
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; gallium compounds; molecular beam epitaxial growth; semiconductor heterojunctions; thulium compounds; wafer bonding; GaAs collector; GaP emitter; GaP-TmP-GaAs; GaP/TmP/GaAs heterostructure; I-V measurements; TmP base; base-collector junction; common base current gain; emitter-base junction; epitaxial growth; molecular beam epitaxy system; room temperature; transistor action; wafer bonding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010771
