DocumentCode :
1528401
Title :
Impact of SAW device passivation on RF performance
Author :
Marks, Burton W. ; Sheddrick, Don W. ; Jen, Shen
Author_Institution :
RF Monolithics, Dallas, TX, USA
Volume :
48
Issue :
5
fYear :
2001
Firstpage :
1362
Lastpage :
1366
Abstract :
Passivation layers consisting of sputtered Al/sub 2/O/sub 3/ have been deposited onto SAW devices for the purpose of reducing the incidence of shorts. A coupling-of-modes model was used with one-port resonators, coupled resonator filters (CRF), and test structures. The passivation layer stiffens the surface with a velocity increase proportional to t//spl lambda/, where t is the passivation layer thickness. Attenuation is increased slightly, producing a 0.25-dB increase in the loss of a one-port resonator at 314 MHz. The effect on reflectivity is minimal and of much lesser importance to the designer.
Keywords :
UHF filters; passivation; surface acoustic wave resonator filters; surface acoustic wave resonators; 314 MHz; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ sputtered film; RF characteristics; SAW device passivation; coupled resonator filter; coupling-of-modes model; one-port resonator; patterned layer; test structure; Aluminum oxide; Attenuation; Electrodes; Insertion loss; Passivation; Radio frequency; Reflectivity; Surface acoustic wave devices; Testing; Transducers;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/58.949745
Filename :
949745
Link To Document :
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